MMG3001NT1(2007) 데이터 시트보기 (PDF) - Freescale Semiconductor

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MMG3001NT1
(Rev.:2007)

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Freescale Semiconductor 

Table 4. Electrical Characteristics (VCC= 5.6 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)

Characteristic

Symbol

Min

Typ

Max

Small - Signal Gain (S21)

Input Return Loss (S11)

Gp

18

20

—

IRL

—

- 25

—

Output Return Loss (S22)

ORL

—

- 22

—

Power Output @ 1dB Compression

P1dB

—

18.5

—

Third Order Output Intercept Point

IP3

—

32

—

Noise Figure

NF

—

4.1

—

Supply Current (1)

ICC

40

58

75

Supply Voltage (1)

VCC

—

5.6

—

1. For reliable operation, the junction temperature should not exceed 150°C.

Unit

dB

dB

dB

dBm

dBm

dB

mA

V

MMG3001NT1

2

RF Device Data

Freescale Semiconductor

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