TK3R2E06PL 데이터 시트보기 (PDF) - Toshiba

부품명

상세내역

일치하는 목록

TK3R2E06PL

MOSFETs Silicon N-channel MOS (U-MOSIX-H)

Toshiba 

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK3R2E06PL

1. Applications

• High-Efficiency DC-DC Converters

• Switching Voltage Regulators

• Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 21 nC (typ.)

(3) Small output charge: Qoss = 66 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.7 mA)

3. Packaging and Internal Circuit

TK3R2E06PL

TO-220

1: Gate

2: Drain (heatsink)

3: Source

©2017

Toshiba Electronic Devices & Storage Corporation

1

Start of commercial production

2017-06

2017-07-06

Rev.1.0

Share Link: