STFU15NM65N 데이터 시트보기 (PDF) - STMicroelectronics

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STFU15NM65N

N-channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II Power MOSFET in a TO-220FP ultra narrow leads package

STMicroelectronics 

STFU15NM65N

Symbol

ISD

ISDM(1)

VSD(2)

trr

Qrr

IRRM

trr

Qrr

IRRM

Table 8: Source drain diode

Parameter

Test conditions

Electrical characteristics

Min. Typ. Max. Unit

Source-drain current

-

12 A

Source-drain current

(pulsed)

-

48 A

Forward on voltage

ISD = 12 A, VGS = 0 V

-

1.6 V

Reverse recovery time

- 428

ns

Reverse recovery charge

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V

-

4.7

µC

Reverse recovery current

- 21.5

A

Reverse recovery time

- 570

ns

Reverse recovery charge

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

-

6.2

µC

Reverse recovery current

- 22

A

Notes:

(1)Pulse width limited by safe operating area.

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

DocID027631 Rev 2

5/12

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