KHB3D0N70F 데이터 시트보기 (PDF) - KEC
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KHB3D0N70F Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
KHB3D0N70P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switch mode power
supplies.
FEATURES
VDSS= 700V, ID= 3A
Drain-Source ON Resistance
: RDS(ON)= 3.5 @VGS = 10V
Qg(typ.) = 20.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB3D0N70P KHB3D0N70F
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
700
30
3.0
3.0*
12
12*
345
8.0
4.0
137
50
1.04
0.34
V
V
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.91
2.5
/W
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
62.5
/W
* : Drain current limited by maximum junction temperature.
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
KHB3D0N70P
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
A
E
P
K
L
D
MM
N 123
F
B
G
C
O
J
Q
H
1. GATE
2. DRAIN
3. SOURCE
KHB3D0N70F
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D
0.8 +_0.1
E 3.18 +_ 0.1
F
3.3 +_0.1
G 12.57 +_ 0.2
H
0.5 +_0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 2.54 +_ 0.2
N
4.7 +_ 0.2
O 6.68 +_ 0.2
P
6.5
Q 2.76 +_ 0.2
TO-220IS
D
2007. 1. 4
Revision No : 1
G
S
1/2
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