NRVBSS24T3G 데이터 시트보기 (PDF) - ON Semiconductor
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NRVBSS24T3G Datasheet PDF : 6 Pages
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SS22T3G, SS24T3G, NRVBSS24T3G, NRVBSS24NT3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
SS22
SS24
Average Rectified Forward Current
(At Rated VR, TL = 132°C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave,
100 kHz, TC = 127°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Symbol
VRRM
VRWM
VR
IO
IFRM
IFSM
Value
Unit
V
20
40
2.0
A
3.0
A
75
A
Storage/Operating Case Temperature
Tstg, TC
−55 to +150
°C
Operating Junction Temperature (Note 1)
TJ
−55 to +150
°C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Lead (Note 2)
Thermal Resistance,
Junction−to−Ambient (Note 3)
RqJL
RqJA
°C/W
24
80
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 4)
see Figure 2
(iF = 2.0 A)
vF
TJ = 25°C TJ = 125°C
V
0.50
0.46
Maximum Instantaneous Reverse Current (Note 4)
see Figure 4
(VR = 40 V)
IR
TJ = 25°C TJ = 100°C
mA
0.4
5.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with minimum recommended pad size, PC Board FR4.
3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
4. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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