PZTA64 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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PZTA64

SOT-223 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-223 Plastic-Encapsulate Transistors

PZTA64 TRANSISTOR (PNP)

FEATURES

 Low Voltage and High Current

 High Current Gain Applications

SOT-223

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO

Collector-Base Voltage

-30

VCEO

Collector-Emitter Voltage

-30

VEBO

Emitter-Base Voltage

-10

IC

Collector Current

-500

PC

Collector Power Dissipation

1

RθJA

Thermal Resistance From Junction To Ambient

125

Tj

Junction Temperature

150

Tstg

Storage Temperature

-55~+150

Unit

V

V

V

mA

W

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

Min Typ

Collector-emitter breakdown voltage V(BR)CES IC=-0.1mA,IB=0

-30

Collector cut-off current

ICBO

VCB=-30V,IE=0

Emitter cut-off current

IEBO

VEB=-10V, IC=0

DC current gain

hFE(1)*

hFE(2)*

VCE=-5V, IC=-10mA

VCE=-5V, IC=-100mA

10000

20000

Collector-emitter saturation voltage VCE(sat)* IC=-100mA,IB=-0.1mA

Base-emitter voltage

VBE* VCE=-5V, IC=-100mA

Transition frequency

fT

VCE=-5V,IC=-10mA, f=100MHz

125

*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.

Max

-100

-100

-1.5

-2

Unit

V

nA

nA

V

V

MHz

A,Nov,2010

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