PS12034 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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PS12034 Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12034
FLAT-BASE TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
Item
Condition
Ratings
Unit
Tj
Junction temperature
(Note 2)
–20 ~ +125
°C
Tstg
Storage temperature
—
–40 ~ +125
°C
TC
Module case operating temperature
(Fig. 3)
–20 ~ +100
°C
VISO
Isolation voltage
60 Hz sinusoidal AC applied between all terminals and
the base plate for 1 minute.
2500
Vrms
—
Mounting torque
Mounting screw: M3.5
0.78 ~ 1.27
N·m
(Note 2) : The indicated values are specified considering the safe operation of all the parts within the ASIPM. The max. ratings for the ASIPM
power chips (IGBT & FWDi) is Tj < 150.
CASE TEMPERATURE MEASUREMENT POINT
LABEL
TC
(Fig. 3)
THERMAL RESISTANCE
Symbol
Item
Rth(jc)Q
Rth(jc)F
Rth(jc)FR
Rth(cf)
Junction to case Thermal
Resistance
Contact Thermal Resistance
Condition
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Converter Di (1/6)
Case to fin, thermal grease applied (1 Module)
Ratings
Min.
Typ.
Max. Unit
—
—
2.3 °C/W
—
—
3.0 °C/W
—
—
2.5 °C/W
—
—
0.05 °C/W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, VD = 15V, VDB = 15V unless otherwise noted)
Symbol
Item
Condition
VCE(sat)
Collector-emitter saturation
voltage
Tj = 25°C, Input = ON, Ic = 10A, VD = VDB = 15V
(Shunt voltage drop not included)
VEC
FWDi forward voltage
Tj = 25°C, –IC = 10A
VFR
Converter diode voltage
Tj = 25°C, IFR = 12A
IRRM
Converter diode reverse current VR = VRRM, Tj = 125°C
ton
tc(on)
toff
Switching times
1/2 Bridge inductive, Input = 5V ↔ 0V
VCC = 600V, IC = 10A, Tj = 125°C
VD = 15V, VDB = 15V
tc(off)
trr
FWDi reverse recovery time
Note: ton, toff include delay time of the internal control
circuit.
Short circuit endurance
@VCC ≤ 800V, Input = 5V → 0V (One-Shot)
(Output, Arm, and Load, Short Circuit Modes) –20˚C ≤ Tj(start) ≤ 125°C, 13.5V ≤ VD = VDB ≤ 16.5V
Switching SOA
@VCC ≤ 800V, Input = 5V ↔ 0V, Tj ≤ 150°C
IC < OC trip level, 13.5V ≤ VD = VDB ≤ 16.5V
Ratings
Unit
Min. Typ. Max.
—
—
3.6
V
—
—
3.5
V
—
—
1.7
V
—
—
8
mA
0.3
1.2
2.0
µs
—
0.5
1.4
µs
—
2.2
4.0
µs
—
0.9
1.6
µs
—
0.2
—
µs
• No destruction
• FO output by protection operation
• No destruction
• No protecting operation
• No FO output
Mar. 2002
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