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PMBT2907AYS

60V, 600 mA, double PNP switching transistor

Nexperia B.V. All rights reserved 

Nexperia

PMBT2907AYS

60V, 600 mA, double PNP switching transistor

400

hFE

(1)

300

200

(2)

100

(3)

aaa-014480

-1

IC

(A)

-0.8

IB = -20 mA

-18

-16

-0.6

-0.4

-0.2

aaa-014481

-14

-12

-10

-8

-6

-4

-2

0

-10-1

-1

-10

VCE = -10 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

-102

-103

IC (mA)

Fig. 4. DC current gain as a function of collector

current; typical values

-1.2

aaa-014482

VBE

(V)

(1)

-0.8

(2)

(3)

-0.4

0

0

-2

-4

-6

-8

-10

VCE (V)

Tamb = 25 °C

Fig. 5. Collector current as a function of collector-

emitter voltage; typical values

-1.2

VBEsat

(V)

-1.0

-0.8

-0.6

-0.4

aaa-014483

(1)

(2)

(3)

0

-10-1

-1

-10

VCE = -10 V

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

-102

-103

IC (mA)

Fig. 6. Base-emitter voltage as a function of collector

current; typical values

-0.2

-10-1

-1

-10

IC/IB = 10

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

-102

-103

IC (mA)

Fig. 7. Base-emitter saturation voltage as a function of

collector current; typical values

PMBT2907AYS

Product data sheet

All information provided in this document is subject to legal disclaimers.

26 June 2015

© Nexperia B.V. 2017. All rights reserved

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