PMBTA42 데이터 시트보기 (PDF) - Inchange Semiconductor
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PMBTA42 Datasheet PDF : 4 Pages
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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter sustaining Voltage
: VCEO=300V(Min)
·Low current
·SOT-23 plastic package
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Telephony and professional communication equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
PMBTA42
VALUE
UNIT
300
V
300
V
6
V
500
mA
350
mW
150
℃
-55~150
℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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