STTH6012W 데이터 시트보기 (PDF) - Thinki Semiconductor Co., Ltd.
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STTH6012W
Thinki Semiconductor Co., Ltd.
STTH6012W Datasheet PDF : 3 Pages
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STTH6012W
®
120
100
80
60
TJ =125°C
40
20
TJ =25°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VF（V）
Figure1. Forward Voltage Drop vs Forward Current
100
VR=600V
TJ =125°C
80
60
40
IF=120A
IF=60A
20
IF=30A
0
0
200 400 600 800 1000
diF/dt（A/μs）
Figure3. Reverse Recovery Current vs diF/dt
500
400
300
200 IF=120A
IF=60A
IF=30A
100
VR=600V
TJ =125°C
0
0
200 400 600 800 1000
diF/dt（A/μs）
Figure2. Reverse Recovery Time vs diF/dt
10
VR=600V
TJ =125°C
8
6
4
IF=120A
IF=60A
IF=30A
2
0
0
200 400 600 800 1000
diF/dt（A/μs）
Figure4. Reverse Recovery Charge vs diF/dt
1.4
1.2
1.0
0.8
0.6
IRRM
0.4
trr
0.2 Qrr
0
0 25 50 75 100 125 150
TJ (°C)
Figure5. Dynamic Parameters vs Junction Temperature
1
10-1
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-3
10-410-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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