STTH2003C-Y 데이터 시트보기 (PDF) - STMicroelectronics
부품명
상세내역
일치하는 목록
STTH2003C-Y Datasheet PDF : 7 Pages
| |||
STTH2003C-Y
Characteristics
Table 5. Recovery characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
trr Reverse recovery time Tj = 25 °C
tfr Forward recovery time Tj = 25 °C
VFP Peak forward voltage
Tj = 25 °C
IRM Reverse recovery current
Tj = 125 °C
S factor Softness factor
IF = 0.5 A, Irr = 0.25 A
IR = 1 A
IF = 1 A, VR = 30 V
dIF/dt = -50 A/µs
IF = 10 A
dIF/dt = 100 A/µs
VFR = 1.1 x VFmax
IF = 10 A,
dIF/dt = 100 A/µs
IF = 10 A, VCC = 200 V
dIF/dt = 200 A/µs
25
ns
40
230
ns
3.5
V
8
A
0.3
-
Figure 1.
Conduction losses versus average Figure 2.
forward current (per diode)
Forward voltage drop versus
forward current (maximum values,
per diode)
P1(W)
14
12
10
8
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
δ=1
IFM(A)
200
100
Tj=125°C
Tj=25°C
6
10
Tj=75°C
4
T
2
0
IF(AV)(A)
δ=tp/T
tp
1
VFM(V)
0
2
4
6
8
10
12
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
Peak reverse recovery current
versus dIF/dt (90% confidence, per
diode)
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
0.4
IRM(A)
16
14
VR=200V
Tj=125°C
12
10
8
6
IF=0.5 x IF(AV)
IF=IF(AV)
IF=2 x IF(AV)
0.2
Single pulse
0.0
1E-3
tp(s)
1E-2
1E-1
4
2
dIF/dt(A/µs)
0
1E+0
0
50 100 150 200 250 300 350 400 450 500
Doc ID 022396 Rev 1
3/7
Share Link: 