Hight frequency secondary rectifier
INCHANGE Semiconductor
STTH2003CT
FEATURES
·Guarding for over voltage protection
·Combines highest recovery
and reverse voltage performance
·Ultra-fast, soft and noise-free recovery
·Low forward voltage,high efficiency
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching power supply
·Power switching circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
300
V
IF(AV)
Average Rectified Forward Current Per Leg
Total
device
10
20
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
110
A
wave, single phase, 60Hz)
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65-175 ℃
isc website:www.iscsemi.com
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