STTH2003CFP(2007) 데이터 시트보기 (PDF) - STMicroelectronics
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STTH2003CFP Datasheet PDF : 11 Pages
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Characteristics
1
Characteristics
STTH2003C
Table 1. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
300
V
IF(RMS) RMS forward voltage
IF(peak)
Peak working forward
current δ = 0.5
I2PAK, D2PAK,
TO-220AB
TO-220FPAB
Tc = 140°C
Tc = 125°C
30
A
Per diode
10
A
Per device
20
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
110
A
IRSM Non repetitive avalanche current
tp = 10 µs square
5
A
Tstg Storage temperature range
-65 to + 175 °C
Tj
Maximum operating junction temperature
175
°C
Table 2.
Symbol
Thermal resistance
Parameter
Rth(j-c) Junction to case
Rth(c)
Per diode
I2PAK, D2PAK, TO-220AB
Total
TO-220FPAB
Per diode
Total
I2PAK, D2PAK, TO-220AB Coupling
TO-220FPAB
Coupling
Value (max)
2.5
1.3
4.6
4
0.1
3.5
Unit
°C/W
Table 3.
Symbol
Static electrical characteristics (per diode)
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
VR = 300 V
IF = 10 A
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
Note:
To evaluate the conduction losses use the following equation:
P = 0.75 x IF(AV) + 0.025 IF2(RMS))
20
µA
30 300
1.25
V
0.85
1
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