STB100NF04T4 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd
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STB100NF04T4 Datasheet PDF : 9 Pages
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STB100NF04T4
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
www.VBsemi.tw
Axis Title
250
10000
VGS = 10 V thru5 V
200
VGS =4V
1000
150
Axis Title
200
10000
160
1000
120
100
50
0
0
100
VGS =3 V
VGS = 2 V
10
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
80
40
0
0
TC = 25 °C
100
TC = 125 °C
TC = -55 °C
2
4
6
8
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
10
10
Axis Title
100
TC = -55 °C
80
TC = 25 °C
60
10000
1000
40
TC = 125 °C
100
20
0
10
0
5.0 10.0 15.0 20.0 25.0 30.0
ID - Drain Current (A)
2nd line
Transconductance
0.008
Axis Title
10000
0.007
0.006
0.005
VGS = 4.5V
VGS = 10 V
1000
100
0.004
0
20
40
60
80
ID - Drain Current (A)
2nd line
10
100
On-Resistance vs. Drain Current
6000
Axis Title
10000
4800
Ciss
3600
1000
2400
Coss
100
1200
Crss
0
10
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
2nd line
Capacitance
10
ID = 30 A
8
6
Axis Title
10000
1000
4
VDS = 25 V, 20 V, and 15 V 100
2
0
10
0
11
22
33
44
55
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
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