SD263C36S50L 데이터 시트보기 (PDF) - Vishay Semiconductors
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SD263C36S50L Datasheet PDF : 9 Pages
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SD263C..S50L Series
Fast Recovery Diodes Vishay High Power Products
(Hockey PUK Version), 375 A
500
450
400
350
300
250
200
150
100
50
0
0
VF P
I
TJ = 1 2 5°C
TJ = 2 5°C
SD 263C ..S 50L Series
200 400 600 800 1000 1200 1400 1600 1800 2000
R a t e O f R ise O f Fo rw a rd C u rre n t - d i/ d t (A / u s)
Fig. 11 - Typical Forward Recovery Characteristics
9
S D 2 6 3 C ..S 5 0 L Se rie s
8
TJ = 1 2 5 °C ; V r > 1 0 0 V
7
I FM = 1000 A
6
Sine Pu lse
500 A
5
150 A
4
3
2
10
10 0
10 0 0
Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 12 - Recovery Time Characteristics
60 0
I FM = 1000 A
50 0
Sine Pu lse
500 A
40 0
150 A
30 0
20 0
S D 2 6 3 C ..S5 0 L S e r ie s
10 0
TJ = 1 2 5 °C ; V r > 1 0 0 V
0
0 50 100 150 200 250 300
Rate O f Fall O f Fo rw ard C urre nt - d i/dt (A /µs)
Fig. 14 - Recovery Current Characteristics
1 40 0
1 20 0
I FM = 1000 A
Sin e Pulse
1 00 0
8 00
6 00
500 A
150 A
4 00
SD 2 6 3 C ..S 5 0 L Se rie s
2 00
TJ = 1 2 5 ° C ; V r > 1 0 0 V
0
0 50 100 150 200 250 300
R ate O f Fall O f Fo rwa rd Curre nt - d i/dt ( A/µs)
Fig. 13 - Recovery Charge Characteristics
1E4
10 jo ule s pe r pu lse
6
4
2
1
0 .5
1E3
0 .3
1E2
1E 1
SD 263C..S50L Series
Sinu soida l Pu lse
tp
TJ = 1 2 5°C , VRRM= 1 5 0 0 V
d v/d t = 1000V/µs
1E2
1E3
Pulse Basew idth ( µs)
1E4
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
Document Number: 93173
Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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