RSB6.8F2FH 데이터 시트보기 (PDF) - ROHM Semiconductor
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RSB6.8F2FH Datasheet PDF : 5 Pages
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Diodes
Bi-Directional Zener Diodes
RSB6.8F2FH
RSB6.8F2FH
AEC-Q101 Qualified
zOutline
RRSSBB66.8.F82FF2H is a bi-directional zener diode having two
zeners confronted in one package, aimed to absorb the
surge in plus and minus directions arising from the signal
line in mobile phone, consumer electronics such as PC,
and automotive applications.
In general, two pieces of zener diodes are used as ESD
protector to absorb the surge in +/ - directions. Paying
attention to this point and using its original technology,
ROHM succeeded to incorporate 2 zeners in one die /
package for benefit of space-saving on the circuit board.
zFeatures
1) Absorption of plus & minus surge with one package.
2) Decrease of components and space-saving on the
circuit board.
zDimensions(Unit : mm)
0.3±0.1
(3)
6W
(2) (1)
0.65 0.65
1.3±0.1
2.0±0.2
zStructure
(3)
0.15±0.05
0~0.1
0.6 0.3
0.9±0.1
(2)
(1)
z Absolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Unit
Power dissipation (*1)
Pd
200
mW
Junction temperature
Tj
150
㷄
Operation temperature range
Tstg
-55 to +150
㷄
(*1) Total of 2 elements
zElectrical characteristics̈́Ta=25qCͅ(Rating of per diode)
Parameter
Zener voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ.
Vz
5.780
-
IR
-
-
Ct
-
30
Zener voltage to be measured at 40ms after current starting to apply.
Max.
7.820
0.5
-
Unit
Conditions
V
IF=1mA
μA
VR=3.5V
pF
VR=0V , f=1MHz
1/1
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