RMWM38001 데이터 시트보기 (PDF) - Fairchild Semiconductor
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RMWM38001 Datasheet PDF : 5 Pages
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Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs
compatible thermal coefficient of expansion and high
thermal conductivity such as copper molybdenum or
copper tungsten. The chip carrier should be machined,
finished flat, plated with gold over nickel and should be
capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy
solder and should avoid hydrogen environment for PHEMT
devices. Note that the backside of the chip is gold plated
and is used as RF ground.
These GaAs devices should be handled with care and
stored in dry nitrogen environment to prevent
contamination of bonding surfaces. These are ESD
sensitive devices and should be handled with appropriate
precaution including the use of wrist grounding straps. All
die attach and wire/ribbon bond equipment must be well
grounded to prevent static discharges through the device.
Recommended wire bonding uses 3mils wide and 0.5mil
thick gold ribbon with lengths as short as practical allowing
for appropriate stress relief. The RF input and output bonds
should be typically 0.012" long corresponding to a typical
2mil gap between the chip and the substrate material.
RF OUT
UP-CONVERSION
MMIC CHIP
IF IN
RF IN
DOWN-CONVERSION
MMIC CHIP
IF OUT
GROUND
(Back of CHIP)
LO IN
GROUND
(Back of CHIP)
Figure 1. Functional Block Diagram
LO IN
0.0
1.4
0.7205 0.863
1.4
1.4
0.3055
0.163
0.0
0.3065
0.164
0.0
0.0
1.4
Dimensions in mm
Figure 2. Chip Layout and Bond Pad Locations
(Chip Size is 1.4mm x 1.4mm x 100µm. Back of chip is RF Ground)
©2004 Fairchild Semiconductor Corporation
RMWM38001 Rev. D
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