RCD100N20TL 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd
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RCD100N20TL Datasheet PDF : 7 Pages
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RCD100N20TL
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40 VGS = 10 V thru 7 V
6V
8
30
6
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20
10
5V
0
0
70
60
50
40
30
20
10
0
0
2500
4V
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
TC = - 55 °C
25 °C
125 °C
10
20
30
40
ID - Drain Current (A)
Transconductance
2000
Ciss
1500
1000
500
Crss
Coss
0
0
40
80
120
160
200
VDS - Drain-to-Source Voltage (V)
Capacitance
4
2
0
0
0.20
TC = 125 °C
25 °C
- 55 °C
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.15
0.10
VGS = 6 V
0.05
VGS = 10 V
0.0
0
20
10
20
30
40
ID - Drain Current (A)
On-Resistance vs. Drain Current
16
VDS = 100 V
ID = 19 A
12
8
4
0
0
10
20
30
40
50
60
Qg - Total Gate Charge (nC)
Gate Charge
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