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QJD1210011 Datasheet PDF : 7 Pages
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QJD1210011
Split Dual SiC MOSFET Module
100 Amperes/1200 Volts
Preliminary
50nF
TYPICAL CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
VGS = 20V
f = 1MHz
Ciss
5nF
Coss
500pF
Crss
50pF
0
200
150
200 400 600 800 1000
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
FREE-WHEEL SCHOTTKY DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
Vf = 25°C
Vf = 150°C
Vf = 175°C
GATE CHARGE VS. VGE
20
16
ID = 100A
12
8
4
0
0 100 200 300 400 500 600
GATE CHARGE, QG, (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MOSFET)
10110-3
10-2
10-1
100
101
Single Pulse
TC = 25°C
100
Per Unit Base = Rth(j-c) = 0.167°C/W
100
10-1
10-1
50
10-2
10-2
0
0
1
2
3
FORWARD VOLTAGE, VF, (VOLTS)
10-3
10-5
TIME, (s)
10-4
10-3
10-3
6
2/7/14 Rev. 4
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