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QJD1210010
(Rev.:2005)

Split Dual SiC MOSFET Module 100 Amperes/1200 Volts

Powerex 

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

QJD1210010

Split Dual SiC MOSFET Module

100 Amperes/1200 Volts

MOSFET Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Drain-Source Breakdown Voltage

V(BR)DSS

ID = 50μA, VGS = 0

Zero Gate Voltage Drain Current**

IDSS

VGS = 0, VDS = 1200V

Zero Gate Voltage Drain Current**

IDSS

VGS = 0, VDS = 1200V, Tj = 175°C

Gate Leakage Current

IGSS

VDS = 0, VGS = 20V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 10mA

VDS = VGS, ID = 10mA, Tj = 175°C

Drain-Source On Resistance

RDS(on)

ID = 100A, VGS = 20V

ID = 100A, VGS = 20V, Tj = 175°C

Gate to Source Charge

Qgs

VDD = 800V, ID = 100A

Gate to Drain Charge

Qgd

VDD = 800V, ID = 100A

Total Gate Charge

QG

VCC = 800V, IC = 100A, VGS = -5/20V

Body Diode Forward Voltage

VSD

IF = 50A, VGS = -5V

Input Capacitance

Ciss

Output Capacitance

Coss

VGS = 0, VDS = 800V, f = 1MHz

Reverse Transfer Capacitance

Crss

Turn-on Delay Time

td(on)

VDD = 800V, ID = 100A,

Rise Time

tr

VGS = -2/20V,

Turn-off Delay Time

td(off)

RG = 6.8Ω

Fall Time

tf

Inductive Load

**Total module leakage includes MOSFET leakage plus reverse Schottky diode leakage.

Preliminary

Min.

Typ.

Max. Units

1200

—

—

Volts

—

0.35

2.6

mA

—

0.40

4.0

mA

—

—

1.5

µA

1.5

2.5

5.0

Volts

1.0

1.7

5.0

Volts

—

15

25

mΩ

—

20

32

mΩ

—

140

—

nC

—

220

—

nC

—

500

—

nC

—

4.0

—

Volts

—

10.2

—

nF

—

1.0

—

nF

—

0.1

—

nF

—

17.2

—

ns

—

13.6

—

ns

—

62

—

ns

—

35.6

—

ns

08/05 Rev. 3

3

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