MCR25M 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.
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MCR25M Datasheet PDF : 6 Pages
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MCR25D, MCR25M, MCR25N
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
RθJC
RθJA
TL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
IDRM
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
IRRM
—
TJ = 125°C
—
ON CHARACTERISTICS
Peak Forward On-State Voltage* (ITM = 50 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
VTM
—
IGT
4.0
VGT
0.5
Holding Current (VD =12 Vdc, Initiating Current = 200 mA, Gate Open)
IH
5.0
Latching Current (VD = 12 V, IG = 30 mA)
IL
—
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = 67% of Rated VDRM, Exponential Waveform, Gate Open,
TJ = 125°C)
dv/dt
100
Critical Rate of Rise of On–State Current
(IPK = 50 A, Pw = 30 µsec, diG/dt = 1 A/µsec, Igt = 50 mA)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
di/dt
—
Value
1.5
62.5
260
Unit
°C/W
°C
Typ
Max
Unit
mA
—
0.01
—
2.0
—
1.8
Volts
12
30
mA
0.67
1.0
Volts
13
40
mA
35
80
mA
250
—
V/µs
—
50
A/µs
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