IRF614STRLPBF 데이터 시트보기 (PDF) - Vishay Semiconductors

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IRF614STRLPBF

Power MOSFET

Vishay Semiconductors 

Package Information

Vishay Siliconix

TO-263AB (HIGH VOLTAGE)

(Datum A)

34

A

E

4 L1

4

A

A

B

c2

D

5

H

CC

123

L2

BB

Detail A

2xe

2 x b2

2xb

0.010 M A M B

Plating

(c)

A

c

± 0.004 M B

5

b1, b3

Base

metal

c1 5

Gauge

plane

0° to 8°

H

B

Seating plane

L3 L L4

A1

Detail “A”

Rotated 90° CW

scale 8:1

E

D1 4

Lead tip

(b, b2)

Section B - B and C - C

Scale: none

E1

4

View A - A

MILLIMETERS

INCHES

MILLIMETERS

INCHES

DIM.

MIN.

MAX.

MIN.

MAX.

DIM.

MIN.

MAX.

MIN.

MAX.

A

4.06

4.83

0.160

0.190

D1

6.86

-

0.270

-

A1

0.00

0.25

0.000

0.010

E

9.65

10.67

0.380

0.420

b

0.51

0.99

0.020

0.039

E1

6.22

-

0.245

-

b1

0.51

0.89

0.020

0.035

e

2.54 BSC

0.100 BSC

b2

1.14

1.78

0.045

0.070

H

14.61

15.88

0.575

0.625

b3

1.14

1.73

0.045

0.068

L

1.78

2.79

0.070

0.110

c

0.38

0.74

0.015

0.029

L1

-

1.65

-

0.066

c1

0.38

0.58

0.015

0.023

L2

-

1.78

-

0.070

c2

1.14

1.65

0.045

0.065

L3

0.25 BSC

0.010 BSC

D

8.38

9.65

0.330

0.380

L4

4.78

5.28

0.188

0.208

ECN: S-82110-Rev. A, 15-Sep-08

DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimensions are shown in millimeters (inches).

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the

outmost extremes of the plastic body at datum A.

4. Thermal PAD contour optional within dimension E, L1, D1 and E1.

5. Dimension b1 and c1 apply to base metal only.

6. Datum A and B to be determined at datum plane H.

7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364

Revision: 15-Sep-08

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