EN29F08045SI 데이터 시트보기 (PDF) - Eon Silicon Solution Inc.
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EN29F08045SI Datasheet PDF : 37 Pages
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EN29F080
Low VCC Write Inhibit
When Vcc is less than VLKO, the device does not accept any write cycles. This protects data during Vcc
power up and power down. The command register and all internal program/erase circuits are disabled,
and the device resets. Subsequent writes are ignored until Vcc is greater than VLKO. The system must
provide the proper signals to the control pins to prevent unintentional writes when Vcc is greater than
VLKO.
Write Pulse “Glitch” protection
Noise pulses of less than 5 ns (typical) on OE , CE or W E do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE = VIL, CE = VIH, or W E = VIH. To initiate a write
cycle, and must be a logical zero while OE is a logical one.
COMMAND DEFINITIONS
The operations of the EN29F080 are selected by one or more commands written into the command
register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase,
Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data sequences
written at specific addresses via the command register. The sequences for the specified operation
are defined in the Command Definitions table (Table 5). Incorrect addresses, incorrect data values
or improper sequences will reset the device to Read Mode.
Table 5. EN29F080 Command Definitions
Command
Sequence
Read/Reset
Reset
Read
AutoSelect
Manufacturer ID
AutoSelect Device ID
Cycles
1
4
4
1st
Write Cycle
Addr Data
XXXh F0h
RA RD
555h AAh
4
555h AAh
2nd
Write Cycle
Addr Data
3rd
Write Cycle
Addr Data
4th
Write Cycle
Addr Data
5th
6th
Write Cycle Write Cycle
Addr Data Addr Data
2AAh 55h 555h 90h X100h 1c
2AAh 55h 555h 90h X101h 08
AutoSelect Sector
Protect Verify
Byte Program
4
555h AAh
2AAh
55h 555h 90h
BA &
02h
00h/
01h
4
555h AAh 2AAh 55h 555h A0h PA PD
Chip Erase
6 555h AAh 2AAh 55h 555h 80h 555h AAh 2AAh 55h 555h 10h
Sector Erase
6 555h AAh 2AAh 55h 555h 80h 555h AAh 2AAh 55h BA 30h
Sector Erase Suspend 1
xxxh B0h
Sector Erase Resume 1
xxxh 30h
RA = Read Address: address of the memory location to be read
RD = Read Data: data read from location RA during Read operation
PA = Program Address: address of the memory location to be programmed
PD = Program Data: data to be programmed at location PA
BA = Sector Address: address of the Sector to be erased or verified. Address bits A17-A13 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read array data
using the standard read timings, with the only difference in that if it reads at an address within erase
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