BCR5AS-12B 데이터 시트보기 (PDF) - Renesas Electronics
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BCR5AS-12B Datasheet PDF : 8 Pages
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BCR5AS-12B (The product guaranteed maximum junction temperature of 150°C)
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
Tj = 125°C
120
III Quadrant
100
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140
Tj = 150°C
120
100
III Quadrant
80
60
40 I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=150°C)
7
5 Main Voltage
Time Typical Example
(dv/dt)c
VD Tj = 150°C
3
Main Current
IT
(di/dt)c
2
τ Time
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
101
7
III Quadrant
5
I Quadrant
3
2
Minimum
Characteristics
Value
100
7100 2 3 5 7 101 2 3 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Commutation Characteristics (Tj=125°C)
7
5 Main Voltage
Time Typical Example
(dv/dt)c
VD Tj = 125°C
3
Main Current
IT
2
τ
(di/dt)c
Time
IT = 4A
τ = 500µs
VD = 200V
101
f = 3Hz
7
5
Minimum
3 Characteristics
Value
2
I Quadrant
100
7
100
23
III Quadrant
5 7 101 2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5
IRGT III
4
3
2 IRGT I
Typical Example
102
7 IFGT I
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
Gate Current Pulse Width (µs)
REJ03G0451-0300 Rev.3.00 Nov 30, 2007
Page 5 of 7
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