MGFC5215 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC

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MGFC5215

K-Band 2-Stage Power Amplifier

MITSUBISHI ELECTRIC  

PRELIMINARY

Notice : This is not a final specification

Some parametric limits are subject to change.

DESCRIPTION

The MGFC5215 is a GaAs MMIC chip especially

designed for 27.5 ~ 30.0 GHz band Middle

Power Amplifier (MPA) .

FEATURES

RF frequency : 27.5 to 30.0 GHz

Linear gain : ≥ 13 dB

P1dB : ≥ 23 dBm

DC power : Vd = 5 V, Id1 + Id2 = 270 mA

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

MGFC5215

K-Band 2-Stage Power Amplifier

BLOCK DIAGRAM

Vg1 Vg2

In

Out

Vd1 Vd2

ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)

Symbol

Vd1, Vd2

Vg1, Vg2

Id1

Id2

Pin

Ta

Tstg

Tmax

Parameter

Drain supply voltage

Gate supply voltage

Drain current 1

Drain current 2

RF input power

Backside ambient temp.

Storage temp.

Maximum assembly temp.

Ratings

6

-3 ~ 0.5

120

240

16

-20 ~ +70

-65 ~ +175

+300

Units

V

V

mA

mA

dBm

˚C

˚C

˚C

ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)

Symbol

Parameter

Conditions

Gain

VSWR in

VSWR out

P1dB

Gain

Input VSWR

Output VSWR

Output power at 1 dB

compression point

IM3

Inter modulation level

Vd = 5 V

Id1 = 90 mA

Id2 = 180 mA

(RF off)

f = 27.5, 30.0 GHz

Single tone

f = 27.5, 30.0 GHz

Tow tone(10MHz off)

Pout = 20 dBm

Limits

Min. Typ.

13.0

Max.

3.0

3.0

Units

dB

-

-

23.0

dBm

(22.0)

dBc

MITSUBISHI

ELECTRIC

as of July '98

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