MPSA29 데이터 시트보기 (PDF) - New Jersey Semiconductor
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MPSA29 Datasheet PDF : 2 Pages
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'jziieu ^£.mi-donaac.ioi ZPioaucti, One.
Cs
tj
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MPSA28/MPSA29
TO-92
Plastic Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at T4=2S'C
Derate Above 25*C
Power Dissipation at Tr.=25'!C
Derate Above 25aC
Operating And Storage Junction
Temperature Range
SYMBOL
VCES
VCBO
VEBO
lc
PD
Po
Tj, T«,
MPSA28
80
80
12
5CJO
6i»
50
15
12
-55 to +150
MPSA29
100
100
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
R« (,-•!
R(h [)•«>
200
83,3
ELECTRICAL CHARACTERISTICS <T»=25»C unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCES
Ic-IOOuA, Vre»0
MPSA28
MPSA29
Collector Base Voltage
VCBO
lc-100»iA, IE.0
Emitter Base Voltage
MPSA28
MPSA29
VE80
IE=IOHA, ic-o
Collector Cut Off Current
ICBO VCB=60V, IE=0,
VPS=80V, 1^0,
MPSA28
MPSA29
Collector Cut Off Current
ICES
VCE-60V, Vre-0, MPSA28
VCE«80V, VBE=0, MPSA29
Emitter Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
'ESO
'^FE
*y
VCE (sat)
VEB=10V, l c - 0
VCE-SV, lc=10mA
VCE-SV, lc- 100mA
IcslOmA, lB»0.01mA
lc=100mA, lB»0.1mA
Base Emitter On Voltage
*VBE (on)
VC6=5V, lc. 100mA
Current Gain Bandwidth Product
"ft
tc=10mA, VCE=5V, f=100MHz
Output Capacitance
GO»
VCB«10V, IE»OV, f-1.0 MHz
MIN
80
100
80
100
12
10,000
10,000
125
MAX
100
100
500
500
100
1.2
1.5
2.0
8.0
•Pulse test: Pulse Width <300us. Duty Cycle<2%
UNITS
V
V
V
mA
mW
mW/8C
W
mW/aC
BC
BC/W
«C/W
UNITS
V
V
V
V
V
nA
nA
nA
nA
nA
V
V
V
MHz
pF
Quality Semi-Conductors
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