UT62L25716BSL-55LI 데이터 시트보기 (PDF) - Utron Technology Inc

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UT62L25716BSL-55LI

256K X 16 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



UTRON

Rev. 1.3

REVISION HISTORY

UT62L25716(I)

256K X 16 BIT LOW POWER CMOS SRAM

REVISION

Preliminary Rev. 0.5

Rev.1.0

Rev.1.1

Rev.1.2

Rev.1.3

DESCRIPTION

Original.

1.Separate Industrial and Commercial SPEC.

2.New waveforms.

3.Add access time 55ns range.

4.The symbols CE1# and OE# and WE# are revised as. CE1 and

OE and WE .

1.Revised access time 55/70/100ns

-Rev 1.0: 55ns(max) for Vcc=3.0V~3.6V

70/100 ns(max) for Vcc=2.7V~3.6V

2.Revised “SYMBOL” : CE1 CE

3.Revised ABSOLUTE MAXIMUM RATINGS

- VTERM : -0.3 to 4.6 -0.5 to 4.6V

- PD : 1.0~1.5 1W

- IOUT : 50 20mA

4.Revised DC CHARACTERISTICS

- VIH : 2.0 2.2V

5.Revised AC CHARACTERISTICS

- tOH & tBLZ : 5 10ns

6.Revised 48-pin TFBGA package outline dimension：

-ball diameter : 0.3mm 0.35mm

1. Revised Standby current (LL-Version) : 3uA(typ) 2uA(typ)

2. Revised operating current (Iccmax) : 45/35/25mA 40/30/25mA

3. Revised DC CHARACTERISTICS :

a. Operating Power Supply Current (Icc)

55ns (max) : 45 40mA

70ns (typ) : 25 20mA, 70ns (max) : 35

100ns (Typ) : 20 16mA

b. Standby current(CMOS) :

LL-version (typ) : 3 2uA, 25 20uA

30mA

1. Revised VOH(Typ) : NA 2.7V

2. Add VIH(max)=VCC+2.0V for pulse width less than 10ns.

VIL(min)=VSS-2.0V for pulse width less than 10ns.

3. Add order information for lead free product

Draft Date

Mar, 2001

Aug 7,2001

Nov 8 ,2002

Dec 3,2002

May 6,2003

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

1

P80046

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