2N3904 데이터 시트보기 (PDF) - Daya Electric Group Co., Ltd.

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2N3904

TO-92 Plastic-Encapsulate Transistors

Daya Electric Group Co., Ltd. 

TO-92 Plastic-Encapsulate Transistors

2N3904 TRANSISTOR (NPN)

FEATURE

z NPN silicon epitaxial planar transistor for switching and

Amplifier applications

z As complementary type, the PNP transistor 2N3906 is

Recommended

z This transistor is also available in the SOT-23 case with

the type designation MMBT3904

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

60

40

6

0.2

0.625

150

-55-150

Units

V

V

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

IEBO

hFE1

hFE2

hFE3

VCE(sat)

VBE(sat)

Transition frequency

fT

Delay Time

td

Rise Time

tr

Storage Time

ts

Fall Time

tf

CLASSIFICATION OF hFE1

Rank

O

Range

100-200

Test conditions

IC=10μA, IE=0

IC= 1mA , IB=0

IE= 10μA, IC=0

VCB=60V, IE=0

VCE= 40V, IB=0

VEB= 5V, IC=0

VCE=1V, IC=10mA

VCE=1V, IC=50mA

VCE=1V, IC=100mA

IC=50mA, IB=5mA

IC=50mA, IB=5mA

VCE=20V,IC=10mA,f=100MHz

VCC=3V,VBE=0.5V,

IC=10mA,IB1=1mA

VCC=3V, IC=10mA

IB1=IB2=1mA

Y

200-300

MIN

60

40

6

100

60

30

300

123

TYP MAX UNIT

V

V

V

0.1

μA

0.1

μA

0.1

μA

400

0.3

V

0.95

V

MHZ

35

ns

35

ns

200

ns

50

ns

G

300-400

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