HMC519LC4 데이터 시트보기 (PDF) - Analog Devices

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HMC519LC4

GaAs PHEMT MMIC LOW NOISE AMPLIFIER

Analog Devices 

v03.0514

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)

RF Input Power (RFIN)(Vdd = +3.0 Vdc)

Channel Temperature

Continuous Pdiss (T= 85 °C)

(derate 12 mW/°C above 85 °C)

Thermal Resistance

(channel to package bottom)

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

+3.5 Vdc

+8 dBm

175 °C

1.08 W

83 °C/W

-65 to 150 °C

-40 to 85 °C

Class 1B

Outline Drawing

HMC519LC4

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 18 - 31 GHz

Typical Supply Current vs. Vdd

Vdd (V)

2.5

3.0

3.5

Idd (mA)

72

75

78

Note: Amplifier will operate over full voltage ranges shown

above.

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA.

2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.

3. DIMENSIONS ARE IN INCHES (MILLIMETERS).

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.

5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO

PCB RF GROUND.

Package Information

Part Number

Package Body Material

HMC519LC4

Alumina, White

[1] Max peak reflow temperature of 260 °C

[2] 4-Digit lot number XXXX

Lead Finish

Gold over Nickel

MSL Rating

MSL3 [1]

Package Marking [2]

H519

XXXX

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