PMPB20EN 데이터 시트보기 (PDF) - Nexperia B.V. All rights reserved
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PMPB20EN Datasheet PDF : 15 Pages
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Nexperia
30
ID
(A)
20
017aaa548
PMPB20EN
30 V, N-channel Trench MOSFET
1.8
a
1.4
017aaa549
10
1.0
Tj = 150 °C
Tj = 25 °C
0
0
1
2
3
4
VGS (V)
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
2.5
VGS(th)
(V)
2.0
max
017aaa560
0.6
-60
0
60
120
180
Tj (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
103
017aaa550
Ciss
C
(pF)
1.5
typ
1.0
min
102
Coss
Crss
0.5
0.0
-60
0
60
120
180
Tj (°C)
ID = 0.25 mA; VDS = VGS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
10
10-1
1
10
102
VDS (V)
f = 1 MHz; VGS = 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMPB20EN
Product data sheet
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12 July 2018
© Nexperia B.V. 2018. All rights reserved
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