BT136 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.
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BT136 Datasheet PDF : 6 Pages
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BT136
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
Non-repetitive peak on-state current
I2t for fusing
Peak gate current
Peak gate voltages
Peak gate power
Average gate power
Junction Temperature
Storage Temperature Range
Thermal resistance junction to ambient
Thermal resistance junction to mounting base
符号
Symbol
VDRM
IT(RMS)
ITSM(t=20ms)
ITSM(t=16.7ms)
I2t(t=10ms)
IGM
VGM
PGM
PG(AV)
Tj
Tstg
Rth(j-a)
Rth(j-b)
DATA SHEET
600E
数值
Rating
800E
600
800
4.0
25
27
3.1
2.0
5.0
5.0
0.5
125
-40～150
60
3.0
单位
Unit
V
A
A
A
A2S
A
V
W
W
℃
℃
K/W
K/W
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state current
Repetitive peak off-state
current
符号
Symbol
IGT
IL
IH
VT
VGT
ID
tgt
dVD/dt
测试条件
Test Conditions
T2+G+
VD=12V
IT=0.1A
T2+G-
T2-G-
T2-G+
T2+G+
VD=12V
IGT=0.1A
T2+G-
T2-G-
T2-G+
VD=12V
IGT=0.1A
IT=5.0A
VD=12V
IT=0.1A
VD=400V,IT=0.1A,
Tj=125℃
VD=VDRM(max) Tj=125℃
ITM=6A,VD=VDRM(max) IG=0.1A
dIg/dt=5A/μs
VD=67% VDRM(max) gate open
Tj=125℃
最小值
Min
0.25
典型值
Typ
2.5
4.0
5.0
11
3.0
10
2.5
4.0
2.2
1.4
0.7
0.4
0.1
2.0
最大值
Max
10
10
10
25
15
20
15
20
15
1.7
1.5
0.5
50
单位
Unit
mA
mA
mA
V
V
mA
μs
V/μs
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