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OP900SL

PN Silicon Photodiode

TT Electronics. 

PN Silicon Photodiode

OP900SL

Electrical Specifications

Absolute Maximum Ratings (TA = 25° C unless otherwise noted)

Reverse Voltage

Opera ng Temperature Range

Storage Temperature Range

Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 seconds with soldering

iron]

Power Dissipa on

100 V

-65° C to +150° C

-65° C to +125° C

260° C(1)

50 mW(2)

Electrical Characteristics (TA = 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN TYP MAX UNITS

TEST CONDITIONS

IL Light Current

8 14 -

µA VR = 10 V, EE = 20 mW/cm2 (3)(4)

ID Dark Current

-

-

10

nA VR = 10 V, EE = 0(3)

V(BR)R Reverse Voltage Breakdown

100 150 -

V IR = 100 μA

tr

Rise Time

tf

Fall Time

- 100 -

- 100 -

ns

VR = 50 V, IL = 8 µA, RL = 1 kΩ

(see test circuit)

Notes:

(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.

(2) Derate linearly 0.5 mW/° C above 25° C.

(3) Junction temperature maintained at 25° C.

(4) Light source is an unfiltered tungsten bulb operating at CT = 2870 K or equivalent infrared source..

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

© TT electronics plc

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Issue A 08/2016 Page 2

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