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MMDF2P01HD Datasheet PDF : 12 Pages
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MMDF2P01HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 3.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
12
−
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
−
−
IGSS
−
VGS(th)
0.7
−
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 2.0 Adc)
(VGS = 2.7 Vdc, ID = 1.0 Adc)
RDS(on)
−
−
Forward Transconductance (VDS = 2.5 Vdc, ID = 1.0 Adc)
gFS
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 5.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 6.0 Vdc, ID = 2.0 Adc,
VGS = 2.7 Vdc,
RG = 6.0 Ω)
td(on)
−
tr
−
td(off)
−
tf
−
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDS = 6.0 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(on)
−
tr
−
td(off)
−
tf
−
Gate Charge
QT
−
(VDS = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc)
Q1
−
Q2
−
Q3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 4.)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)
−
−
Reverse Recovery Time
trr
−
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
−
tb
−
Reverse Recovery Stored Charge
QRR
−
3. Negative sign for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
−
−
17
−
mV/°C
µAdc
−
1.0
−
10
−
100
nAdc
Vdc
1.0
1.1
3.0
−
mV/°C
Ohm
0.16
0.180
0.2
0.220
4.75
−
mhos
530
740
pF
410
570
177
250
21
45
ns
156
315
38
75
68
135
16
35
44
90
68
135
54
110
9.3
13
nC
0.8
−
4.0
−
3.0
−
Vdc
1.69
2.0
1.2
−
48
−
ns
23
−
25
−
0.05
−
µC
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