MCR8SD 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.

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MCR8SD

Sensitive Gate Silicon Controlled Rectifiers

Kersemi Electronic Co., Ltd. 

MCR8SD, MCR8SM, MCR8SN

THERMAL CHARACTERISTICS

Characteristic

Symbol

Thermal Resistance — Junction to Case

— Junction to Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

RθJC

RθJA

TL

Min

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current(1)

IDRM,

(VD = Rated VDRM and VRRM; RGK = 1 kΩ)

TJ = 25°C

IRRM

—

TJ = 110°C

—

ON CHARACTERISTICS

Peak Forward On–State Voltage* (ITM = 16 A)

Gate Trigger Current (Continuous dc)(2)

(VD = 12 V; RL = 100 Ω)

VTM

—

IGT

5.0

Holding Current(2)

(VD = 12 V, Gate Open, Initiating Current = 200 mA)

Latch Current(2)

(VD = 12 V, IG = 200 µA)

IH

—

IL

—

Gate Trigger Voltage (Continuous dc)(2)

(VD = 12 V; RL = 100 Ω)

* TJ = 25°C

TJ = 40°C

VGT

0.3

—

Gate Non–Trigger Voltage

(VD = 12 V, RL = 100 Ω)

TJ = 110°C

VGD

0.2

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off–State Voltage

(VD = 67% VDRM, RGK = 1 KΩ, CGK = 0.1 µF, TJ = 110°C)

Critical Rate of Rise of On–State Current

IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 10 mA

v v *Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.

(1) RGK = 1000 Ohms included in measurement.

(2) Does not include RGK in measurement.

dv/dt

5.0

di/dt

—

Value

2.2

62.5

260

Unit

°C/W

°C

Typ

Max

Unit

µA

—

10

—

500

—

1.8

Volts

25

200

µA

0.5

6.0

mA

0.6

8.0

mA

0.65

1.0

Volts

—

1.5

—

—

Volts

15

—

V/µs

—

100

A/µs

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