1N5829 데이터 시트보기 (PDF) - New Jersey Semiconductor

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1N5829

25 Amp Schottky Barrier Rectifier 20 to 35 Volts

New Jersey Semiconductor 

20 STERN AVE

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

1N5829

thru

1N5831

Features

• Metal of siliconrectifier, majonty carrier conductor)

• Guard ring for transient protection

• Low power loss high efficiency

• High surge capacity, High current capability

Maximum Ratings

• Operating Temperature: -65°C to +150°C

• Storage Temperature: -65°C to +150°C

MCC

Part Number

1N5829

1N5830

1N5831

Maximum

Recurrent

Peak Reverse

Voltage

20V

25V

35V

Maximum

RMS Voltage

14V

17.5V

24.5V

Maximum DC

Blocking

Voltage

20V

25V

35V

TELEPHONE: (973) 378-2922

(212) 227-8005

FAX: (973) 376-6960

25 Amp Schottky

Barrier Rectifier

20 to 35 Volts

DO-4

Electrical Characteristics @ 25 C Unless Otherwise Specified

Average Forward

Ip(AV)

Current

Peak Forward Surge

IFSM

Current

25 A TL = 85°C

800A 8.3ms, half sine

Maximum

Instantaneous

VF

Forward Voltage

1N5829

1N5830

1N5831

.44V

.46V

.48V

IFM = 25 A;

TA=125°C

Maximum DC

Reverse Current At

IR

20mA TA = 25° C

Rated DC Blocking

Voltage

*Pulse Test: Pulse Width SOO^isec, Duty Cycle 1%

10-32 UNF3A Threads

Standard Polarity

N.I Semi-Conductors reserves the right lo change test conditions, parameter limits and package dimensions \vithout notice.

Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or"going to press. However NJ

Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages

customers to verity that datasheets are current before placing orders.

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