BAT54T 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명

상세내역

일치하는 목록

BAT54T

Schottky Barrier Diode

Fairchild Semiconductor 

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

PD

RθJA

Power Dissipation

Thermal Resistance, Junction-to-Ambient

ψJL

Junction-to-Lead Thermal Characteristics,

Thermocouple Soldered to Cathode

Note:

1. Device mounted on FR-4 PCB minimum land pad

Value

150

500

165

Unit

mW

°C/W

°C/W

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted. Parameters are tested per individual diode.

Symbol

Parameter

Conditions

Min.

BVR Reverse Breakdown Voltage IR = 100 μA

30

IR

Reverse Leakage Current

VR = 25 V

IF = 0.1 mA

IF = 1 mA

VF

Forward Voltage

IF = 10 mA

IF = 30 mA

IF = 100 mA

CT

Total Capacitance

VR = 1 V, f = 1 MHz

trr

Reverse Recovery Time

IF = IR = 10 mA, IRR = 0.1 x IR

RL = 100 Ω

Max.

2

0.24

0.32

0.40

0.50

1.00

10

5

Unit

V

μA

V

pF

ns

© 2015 Fairchild Semiconductor Corporation

BAT54T / BAT54ST Rev. 1.0

2

www.fairchildsemi.com

Share Link: