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PS11032

FLAT-BASE TYPE INSULATED TYPE

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MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

PS11032

FLAT-BASE TYPE

INSULATED TYPE

INTERNAL FUNCTIONS BLOCK DIAGRAM

P1

R

S

T

N1

UV Protection

P2

VD

UP

VP

WP

UN

VN

U

WN

V

FO

Fo Circuit

W

V(amp)

+–

GND

N2

(Fig. 2)

MAXIMUM RATINGS (Tj = 25°C)

INVERTER PART

Symbol

VCC

VCC(surge)

VP or VN

VP(S) or

VN(S)

±Ic(±Icp)

Item

Supply voltage

Supply voltage (surge)

Each output IGBT collector-emitter static voltage

Each output IGBT collector-emitter

switching voltage

Each output IGBT collector current

Condition

Applied between P2-N2

Applied between P2-N2, Surge-value

Applied between P2-U.V.W, U.V.W-N2

Applied between P2-U.V.W, U.V.W-N2

TC = 25°C, “( )” means IC peak value

CONVERTER PART

Symbol

VRRM

Ea

IO

IFSM

I2t

Item

Repetitive peak reverse voltage

Recommended AC input voltage

DC output current

Surge (non-repetitive) forward current

I2t for fusing

Condition

3φ rectifying circuit

1 cycle at 60Hz, peak value non-repetitive

Value for one cycle of surge current

CONTROL PART

Symbol

VD, VDB

VCIN

VFO

IFO

Iamp

Item

Supply voltage

Input signal voltage

Fault output supply voltage

Fault output current

DC-Link IGBT current signal Amp output current

Ratings

Unit

450

V

500

V

600

V

600

V

±4 (±8)

A

Ratings

800

220

10

100

42

Unit

V

Vrms

A

A

A2s

Ratings

Unit

–0.5 ~ 20

V

–0.5 ~ +7.5

V

–0.5 ~ +7.5

V

15

mA

1

mA

Jan. 2000

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