MURS140(2007) 데이터 시트보기 (PDF) - Vishay Semiconductors
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MURS140 Datasheet PDF : 4 Pages
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MURS140 & MURS160
Vishay General Semiconductor
100
TJ = 175 °C
10
1
TJ = 100 °C
TJ = 25 °C
0.1
0.01
0
0.4
0.8
1.2
1.6
2.0
2.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
100
TJ = 175 °C
10
1
TJ = 100 °C
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18) MIN.
0.085 (2.159) MAX.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.220 REF.
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 88688 For technical questions within your region, please contact one of the following:
Revision: 27-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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