NSVMMBT6517L 데이터 시트보기 (PDF) - ON Semiconductor

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NSVMMBT6517L

High Voltage Transistor

ON Semiconductor 

MMBT6517L, NSVMMBT6517L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = 1.0 mA)

Collector −Base Breakdown Voltage

(IC = 100 mA)

Emitter −Base Breakdown Voltage

(IE = 10 mA)

Collector Cutoff Current

(VCB = 250 V)

Emitter Cutoff Current

(VEB = 5.0 V)

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 mA, VCE = 10 V)

(IC = 10 mA, VCE = 10 V)

(IC = 30 mA, VCE = 10 V)

(IC = 50 mA, VCE = 10 V)

(IC = 100 mA, VCE = 10 V)

Collector −Emitter Saturation Voltage (Note 3)

(IC = 10 mA, IB = 1.0 mA)

(IC = 20 mA, IB = 2.0 mA)

(IC = 30 mA, IB = 3.0 mA)

(IC = 50 mA, IB = 5.0 mA)

Base −Emitter Saturation Voltage

(IC = 10 mA, IB = 1.0 mA)

(IC = 20 mA, IB = 2.0 mA)

(IC = 30 mA, IB = 3.0 mA)

Base −Emitter On Voltage

(IC = 100 mA, VCE = 10 V)

SMALL− SIGNAL CHARACTERISTICS

Current Gain − Bandwidth Product

(IC = 10 mA, VCE = 20 V, f = 20 MHz)

Collector−Base Capacitance

(VCB = 20 V, f = 1.0 MHz)

Emitter−Base Capacitance

(VEB = 0.5 V, f = 1.0 MHz)

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

Symbol

Min

Max

Unit

V(BR)CEO

V

350

−

V(BR)CBO

V

350

−

V(BR)EBO

V

6.0

−

ICBO

nA

−

50

IEBO

nA

−

50

hFE

VCE(sat)

VBE(sat)

VBE(on)

−

20

−

30

−

30

200

20

200

15

−

V

−

0.30

−

0.35

−

0.50

−

1.0

V

−

0.75

−

0.85

−

0.90

V

−

2.0

fT

MHz

40

200

Ccb

pF

−

6.0

Ceb

pF

−

80

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