KTC3875 데이터 시트보기 (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd
부품명
상세내역
일치하는 목록
KTC3875 Datasheet PDF : 2 Pages
| |||
KTC3875
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Complementary To KTA1504.
z Excellent HFE Linearity.
z Low noise.
A
E
K
B
APPLICATIONS
z General purpose application, switching application.
ORDERING INFORMATION
Type No.
Marking
KTC3875
ALO/ALY/ALG/ALL
D
G
C
Package Code
SOT-23
J
H
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
50
VEBO
Emitter-Base Voltage
5
IC
Collector Current -Continuous
150
IB
Base Current
30
Units
V
V
V
mA
mA
PC
Collector Power Dissipation
150
mW
Tj,Tstg
Junction and Storage Temperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
5
V
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB=60V,IE=0
IEBO
VEB=5V,IC=0
hFE
VCE=6V,IC=2mA
70
0.1 μA
0.1 μA
700
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Collector output capacitance
Cob
Noise figure
NF
IC=100mA, IB=10mA
VCE=10V, IC= 1mA
80
VCB=10V,IE=0,f=1MHz
VCE=6V,IC=0.1mA,
F=1KHz,Rg=10KΩ
0.1 0.25 V
MHz
2.0 3.5 pF
1.0 10 dB
CLASSIFICATION OF hFE
Rank
O
Range
70-140
Marking
ALO
Y
120-240
ALY
GR
200-400
ALG
BL
350-700
ALL
Revision:20170701-P1
http://www.lgesemi.com
SOT-23
Dim
Min
Max
A
2.70
3.10
B
1.10
1.50
C
1.0 Typical
D
0.4 Typical
E
0.35
0.48
G
1.80
2.00
H
0.02
0.1
J
0.1 Typical
K
2.20
2.60
All Dimensions in mm
mail:lge@lgesemi.com
Share Link: 