D526 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

일치하는 목록

D526

NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0

VCEsat Collector-emitter saturation voltage IC=3 A;IB=0.3 A

VBE

Base-emitter voltage

IC=3A ; VCE=5V

ICBO

IEBO

hFE-1

Collector cut-off current

Emitter cut-off current

DC current gain

VCB=80V ;IE=0

VEB=5V; IC=0

IC=0.5A ; VCE=5V

hFE-2

DC current gain

IC=3A ; VCE=5V

fT

Transition frequency

IC=0.5A ; VCE=5V

COB

Output capacitance

IE=0; VCB=10V;f=1MHz

‹ hFE-1 classifications

R

O

Y

40-80 70-140 120-240

Product Specification

2SD526

MIN TYP. MAX UNIT

80

V

1.5

V

1.5

V

30 μA

100 μA

40

240

15

8

MHz

90

pF

2

Share Link: