2SC3159 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SC3159 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC3159
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 6A; IB= 1.2A; L= 1mH
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
1.5
V
ICBO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= 400V; IE= 0
VCE= 400V;VBE(off)=-1.5V
VCE= 400V;VBE(off)=-1.5V,Ta=125℃
VEB= 5V; IC= 0
10 μA
100 μA
1.0 mA
10 μA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
15
80
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
10
hFE-3
DC Current Gain
IC= 6A; VCE= 5V
7
Switching times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 6A; IB1= -IB2= 1.2A;
RL= 25Ω; VCC≈ 150V
1.0 μs
2.5 μs
0.7 μs
SPTECH website：www.superic-tech.com
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