D1616 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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D1616

Silicon NPN transistor in a TO-92 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

KSD1616(A)

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Current – Continuous(Pulse)

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

KSD1616

KSD1616A

VCEO

KSD1616

KSD1616A

VEBO

IC

ICP

PC

Tj

Tstg

DATA SHEET

数值

Rating

60

120

50

60

6.0

1.0

2.0

750

150

-55～150

单位

Unit

V

V

V

A

A

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

符号

Symbol

测试条件

Test Conditions

ICBO

VCB=60V IE=0

IEBO

VEB=6.0V IC=0

KSD1616

hFE(1)

VCE=2.0V

KSD1616A

IC=100mA

最小值 典型值 最大值 单位

Min Typ Max Unit

0.1 μA

0.1 μA

135

600

135

400

Collector to Emitter

Saturation Voltage

Base to Emitter Saturation

Voltage

Base to Emitter On Voltage

hFE(2)

VCE(sat)

VBE(sat)

VBE(on)

VCE=2.0V

IC=1.0A

IC=1.0A

VCE=2.0V

IC=1.0A

IB=50mA

IB=50mA

IC=50mA

81

0.15 0.3 V

0.9 1.2 V

600 640 700 mV

Transition Frequency

Collector Output

Capacitance

Turn-On Time

Storage Time

fT

VCE=2.0V IC=100mA 100 160

Cob

VCB=10V IE=0

f=1.0MHz

19

ton

VCC=10V IC=100mA

0.07

tstg

IB1=-IB2=10mA

0.95

MHz

pF

μs

μs

Turn-Off Time

toff

VBE(off)=-2V~-3V

0.07

μs

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