2SC2001 데이터 시트보기 (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD
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2SC2001 Datasheet PDF : 1 Pages
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RoHS
2SC2001
2SC2001 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T PCM:
Collector current
.,L ICM:
Collector-base voltage
V(BR)CBO:
0.6 W (Tamb=25℃)
0.7 A
30 V
O Operating and storage junction temperature range
C TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
N Parameter
Collector-base breakdown voltage
O Collector-emitter breakdown voltage
R Emitter-base breakdown voltage
T Collector cut-off current
Collector cut-off current
C Emitter cut-off current
E DC current gain
L Collector-emitter saturation voltage
E Base-emitter saturation voltage
JTransition frequency
ECLASSIFICATION OF hFE
WRank
M
Symbol Test conditions
V(BR)CBO
Ic=100µA , IE=0
V(BR)CEO
IC=10mA , IB=0
V(BR)EBO
IE=100µA, IC=0
ICBO
VCB=30 V , IE=0
ICEO
VCE=20 V , IB=0
IEBO
VEB=5 V , IC=0
hFE
VCE=1V, IC=100mA
VCE(sat)
IC=700mA, IB= 70mA
VBE(sat)
fT
IC= 700mA, IB=70mA
VCE=6V, IC= 10mA
f = 30MHz
MIN MAX UNIT
30
V
25
V
5
V
0.1
µA
0.1
µA
0.1
µA
90
400
0.6
V
1.2
V
50
MHz
L
K
Range
90-180
135-270
200-400
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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