2SC2001 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SC2001

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

(/(&75,&$/ &+$5$&7(5,67,&6

Ta=25 Я unless otherwise specified

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

CLASSIFICATION OF hFE

Rank

Range

M

90-180 135-

S ymbol T est condi tions

V(BR)CBO IC=100µA, IE=0

V(BR)CEO IC= 10mA , I B= 0

V(BR)EBO I= E=100µA, IC 0 5

ICBO

= VCB=30 V, IE 0

ICEO

= VCE=20 V, IB 0

IEBO = VEB=5 V, IC 0

hFE

VCE= =1V, IC 100mA 90

VCE(sat) IC=700mA, IB= 70mA

VBE(sat) IC= 700mA, IB= 70mA

VCE=6V, IC= 10mA

fT

f = 30MHz

M in

30

25

50

Max Unit

V

V

V

0.1

µA

0.1

µA

0.1

µA

400

0.6 V

1.2 V

MHz

L

K

270

200-400

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E,Aug,2017

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