1N6519 데이터 시트보기 (PDF) - getedz electronics
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1N6519 Datasheet PDF : 2 Pages
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1N6519
500mA 10kV 70nS-HIGH VOLTAGE DIODE
POWER DERATING
20.0
16.0
12.0
L=0.200"
L=0.100"
L=0.000"
8.0
4.0 L=0.300"
L=0.400"
L=0.500"
0.0
0
25 50 75 100 125 150 175
Lead Temperaattuurree((°CC))
1000.0
REVERSE CURRENT
VS. TEMPERATURE AT Vrwm
100.0
10.0
1.0
25
50
75
100
125
150
Temperaattuurree ((°CC))
TYPICAL REVERSE RECOVERY TIME
350
VS. TEMPERATURE
300
250
200
150
100
50
0
25
50
75
100
125
150
Temperaattuurree ((°CC))
TYPICAL FORWARD VOLTAGE
8
VS. FORWARD CURRENT AT 25°C
7
1N6515
6
5
4
1N6513
3
2
1
0
0.0
2.0
4.0
6.0
8.0
10.0
Forward Current (A)
TYPICAL FORWARD VOLTAGE
20
VS. FORWARD CURRENT AT 25°C
18
16
1N6519
14
12
10
1N6517
8
6
4
2
0
0.0
1.0
2.0
3.0
4.0
5.0
Forward Current (A)
TYPICAL JUNCTION CAPACITANCE
60.0
VS. REVERSE VOLTAGE AT 25°C
50.0
40.0
30.0
1N6513
1N6515
20.0
10.0 1N6517
1N6519
0.0
0
20
40
60
80
100
Reverse Bias Voltage (V)
n n n GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
E-mail: sales@getedz.com
China Tel: 4001 83 84 85
Tel: 0086-20-8184 9628
Fax: 0086-20-8184 9638
www.getedz.com
www.hvgtsemi.com
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