STW13NK60Z 데이터 시트보기 (PDF) - STMicroelectronics
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STW13NK60Z
STMicroelectronics
STW13NK60Z Datasheet PDF : 14 Pages
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STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Operating Junction Temperature
Tstg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤13 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Rthj-pcb
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max (#)
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Value
STP13NK60Z
STB13NK60Z/-1
STW13NK60Z
STP13NK60ZFP
600
600
± 30
13
13 (*)
8.2
8.2 (*)
52
52 (*)
150
35
1.20
0.27
4000
4.5
-
2500
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
-55 to 150
°C
TO-220
I2PAK
TO-247
D2PAK
0.83
60
62.5
300
TO-220FP
3.6
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
Unit
10
A
400
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
(#) When mounted on minimum Footprint
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max. Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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