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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

IRLR3715Z 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.

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IRLR3715Z Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
IRLR/U3715Z
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
-
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
-
D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
* VGS=10V
VDD
ISD
Id
Vds
Vgs
2014-8-24
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 16. Gate Charge Waveform
7
www.kersemi.com

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