IRFF310 데이터 시트보기 (PDF) - New Jersey Semiconductor
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IRFF310 Datasheet PDF : 3 Pages
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IRFF310
Absolute Maximum Ratings Tc = 25°C, Unless otherwise Specified
Drain to Source Voltage (Note 1 )
Drain to Gate Voltage (Res = 20KI2) (Note 1 )
Continuous Drain Current
Pulsed Drain Current (Note 3)
Gate to Source Voltage
Maximum Power Dissipation
.
Linear Derating Factor
Single Pulse Avalanche Energy Rating (Note 4)
Operating and StorageTemperature
..
Maximum Temperature for Soldering
Leads at 0 063in (1 6mm) from Case for 10s
Package Body for 10s See Techbrief 334
IRFF310
UNITS
Vnc;
400
V
400
V
In
1 35
A
55
A
Vpq
+20
V
..
Pn
15
w
0 12
w/°c
EA<;
150
mJ
...
-55 to 1 50
°c
Ti
300
°c
pKg
260
°c
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Tj = 25°Cto125°C.
Electrical Specifications Tc = 25°C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
BVnss VGS = OV, ID = 250nA (Figure 10)
400
-
-
V
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
VGS(TH)
!DSS
VGS = VDS. ID = 250uA
VDS = Rated BVDSS, VGS = OV
VDS = o.s x Rated BVDSS, VGS = ov. TJ = 125°c
2.0
-
4.0
V
-
-
25
uA
-
- 250 MA
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
!D(ON)
!GSS
rDS(ON)
9fs
VDS > !D(ON) x rDS(ON)MAX VGS = 10V
VGS = ±2ov
VGS = 10V. !D = 0.8A (Figures 8, 9)
VDS, = 10V, ID = 1.2A (Figure 12)
1.35
-
-
A
-
- 1100 nA
-
3.3 3.600 n
1.0 1.2
s
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
'd(ON) VDD = 0-5 x Rated BVnss- *G = 9.1iJ, ID = 1.35A,
-
3
10
ns
tr
RL - 144.5U forBVoss - 4 X3V,
-
RL - 1 26n for BVDSS ~350^/(Figures 17, 18), MOSFET
10 20
ns
'd(OFF) Switching Times are Essent ally Independent of
-
5
10
ns
tf
Operating Temperature
-
8
15
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Qg(TOT)
Qgs
VGS = 10V. !D = 1.35A, VDS = 0.8 x Rated BVDSS,
Ig(REF) = 1.5mA (Figures 14, 19, 20), Gate Charge is
Essentially Independent of Operating Temperature
-
6
7.5
nC
-
3
-
nC
Gate to Drain "Miller" Charge
Input Capacitance
Qgd
CISS
VGS = OV, VDS = 2 5 V , f = 10MHz (Figure 11)
-
3
-
nC
-
135 -
PF
Output Capacitance
coss
-
35
-
PF
Reverse-Transfer Capacitance
CRSS
-
8
-
PF
Internal Drain Inductance
LD
Measured from the Drain Modified MOSFET Symbol
5.0
nH
Lead, 5mm (0.2in) from
Showing the Internal
Header to Center of Die
Device Inductances
Internal Source Inductance
LS
Measured from the Source
Lead, 5mm (0.2in) from
Header and Source
Bonding Pad
15
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RBJC
R()JA
Free Air Operation
-
- 8.33 °C/W
-
- 175 °C/W
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