IRF321 데이터 시트보기 (PDF) - Inchange Semiconductor
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IRF321 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF321
DESCRIPTION
·Drain Current ID=3.3A@ TC=25℃
·Drain Source Voltage
: VDSS= 350V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =2.5Ω(Max)
APPLICATIONS
·Switching power supplies
·Switching converters,motor driver,relay driver
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
350
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃
3.3
A
Total Dissipation@TC=25℃
50
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
3.12
30
℃/W
℃/W
isc website：www.iscsemi.cn
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